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| MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING 60.51 57.50.5 50.41 2-R1.6+0.2 0 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 1 2 3 4 5 0.450.2 8.31 21.31 43.31 51.31 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=820-851MHz, ZG=ZL=50 f=820-851MHz, ZG=ZL=50 f=820-851MHz, ZG=ZL=50 Ratings 17 5.5 10 10 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C,ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 820 6 35 Max 851 Unit MHz W % dBc - VDD=12.5V, VGG=5V, Pin=1mW ZG=ZL=50, VDD=10-16V, Load VSWR<4:1 VDD=15.2V, Pin=1mW, PO=6W (VGG adjust), ZL=20:1 -30 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 in T PO 100 90 80 VDD=12.5V 70 VGG=5V 60 Pin=1mW ZG=ZL=50 50 40 30 20 10 0.1 -30 -25 -20 -15 -10 -5 0 5 1 10 1.0 10 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 1000 f=820MHz VDD=12.5V VGG=5V ZG=ZL=50 PO 10.0 100 T 0 0 790 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz) INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 1000 f=851MHz VDD=12.5V VGG=5V 10.0 PO 100 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 9 8 7 6 f=820MHz VDD=12.5V Pin=1mW ZG=ZL=50 100 90 80 PO 70 60 50 T 40 30 20 10 0 3.4 3.8 4.2 4.6 5.0 3.2 3.6 4.0 4.4 4.8 GATE SUPPLY VOLTAGE VGG (V) T 1.0 10 5 4 3 2 1 0.1 -30 -25 -20 -15 -10 -5 0 5 1 10 0 3.0 INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 9 8 7 6 5 4 3 2 1 0 3.0 3.4 3.8 4.2 4.6 T f=851MHz VDD=12.5V Pin=1mW ZG=ZL=50 PO 100 90 80 70 60 50 40 30 20 10 0 5.0 8 6 4 2 0 18 16 14 12 10 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 90 f=820MHz VGG=5V Pin=1mW ZG=ZL=50 80 70 PO 60 50 T 40 30 20 10 4 6 8 10 12 14 16 0 18 3.2 3.6 4.0 4.4 4.8 GATE SUPPLY VOLTAGE VGG (V) DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 16 DRAIN SUPPLY VOLTAGE VDD (V) T f=851MHz VGG=5V Pin=1mW ZG=ZL=50 PO 90 80 70 60 50 40 30 20 10 0 18 Nov. 97 |
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